memory: samsung: endian fixes for IO

Use the relaxed versions of the IO accessors to avoid any issues
if running in big endian.
Signed-off-by: Ben Dooks <ben.dooks@codethink.co.uk>
Signed-off-by: Krzysztof Kozlowski <k.kozlowski@samsung.com>

drivers/memory/samsung/exynos-srom.c

@@ -91,11 +91,11 @@ static int exynos_srom_configure_bank(struct exynos_srom *srom,
 	if (width == 2)
 		cs |= 1 << EXYNOS_SROM_BW__DATAWIDTH__SHIFT;
 
-	bw = __raw_readl(srom->reg_base + EXYNOS_SROM_BW);
+	bw = readl_relaxed(srom->reg_base + EXYNOS_SROM_BW);
 	bw = (bw & ~(EXYNOS_SROM_BW__CS_MASK << bank)) | (cs << bank);
-	__raw_writel(bw, srom->reg_base + EXYNOS_SROM_BW);
+	writel_relaxed(bw, srom->reg_base + EXYNOS_SROM_BW);
 
-	__raw_writel(pmc | (timing[0] << EXYNOS_SROM_BCX__TACP__SHIFT) |
+	writel_relaxed(pmc | (timing[0] << EXYNOS_SROM_BCX__TACP__SHIFT) |
 		       (timing[1] << EXYNOS_SROM_BCX__TCAH__SHIFT) |
 		       (timing[2] << EXYNOS_SROM_BCX__TCOH__SHIFT) |
 		       (timing[3] << EXYNOS_SROM_BCX__TACC__SHIFT) |